IRF6617PBF mosfet equivalent, power mosfet.
0 25 50 75 100 125 150
1.0 -75 -50 -25 0 25 50 75 100 125 150
T J , Junction Temperature (°C)
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs. Case Temperatu.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6617PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro8™ and only 0.7 mm profile. The DirectFET package i.
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